- Packaging :
- Operating Temperature :
- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 49A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 1 | N-Channel | - | 20V | 49A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | 4.5V, 10V | ±20V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 36A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 20V | 36A (Tc) | 16 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | 550pF @ 10V | 4.5V, 10V | ±20V | 35W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V |
