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Part Status :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.960
RFQ
24
In-stock
Infineon Technologies MOSFET N-CH 40V 18A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 40V 18A (Ta) 5 mOhm @ 17A, 10V 2.25V @ 250µA 50nC @ 4.5V 4500pF @ 20V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$1.870
RFQ
514
In-stock
Infineon Technologies MOSFET N-CH 30V 105A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 105A (Tc) 6 mOhm @ 21A, 10V 2.25V @ 250µA 35nC @ 4.5V 2840pF @ 15V 4.5V, 10V ±20V 110W (Tc)
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Per Unit
$1.660
RFQ
2,198
In-stock
Infineon Technologies MOSFET N-CH 30V 87A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 87A (Tc) 6.3 mOhm @ 21A, 10V 2.25V @ 250µA 26nC @ 4.5V 2130pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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