- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 29A 8VQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 29A (Ta), 100A (Tc) | 2.5 mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | 3635pF @ 25V | 4.5V, 10V | ±20V | 3.6W (Ta), 104W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 32A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 32A (Ta), 100A (Tc) | 2.1 mOhm @ 50A, 10V | 2.35V @ 100µA | 76nC @ 10V | 4400pF @ 15V | 4.5V, 10V | ±20V | 3.6W (Ta), 100W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 35A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 35A (Ta), 100A (Tc) | 1.85 mOhm @ 50A, 10V | 2.35V @ 100µA | 77nC @ 10V | 5114pF @ 15V | 4.5V, 10V | ±20V | 3.6W (Ta), 110W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 24A PQFN56 | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 24A (Ta), 104A (Tc) | 3.3 mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | 4270pF @ 15V | 4.5V, 10V | ±20V | 3.4W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 160A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | 135W (Tc) | ||||
|
|
|
563
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 78A TO220 | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 78A (Tc) | 3.5 mOhm @ 40A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 5110pF @ 15V | 4.5V, 10V | ±20V | 140W (Tc) | |||
|
|
|
5,781
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 160A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | 135W (Tc) | |||
|
|
|
10,910
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 78A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 78A (Tc) | 3.2 mOhm @ 40A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | 5110pF @ 15V | 4.5V, 10V | ±20V | 140W (Tc) |
