- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V 11A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | 96W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 12A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | 104W (Tc) | ||||
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34,239
In-stock
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Infineon Technologies | MOSFET N-CH 550V 12A TO220-3 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 550V | 12A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | 10V | ±20V | 104W (Tc) |