Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$1.710
RFQ
356
In-stock
Infineon Technologies MOSFET N-CHANNEL 600V 6A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 600V 6A (Tc) 600 mOhm @ 1.7A, 10V 4V @ 80µA 9nC @ 10V 363pF @ 400V 10V ±20V 21W (Tc)
Default Photo
Per Unit
$1.710
RFQ
449
In-stock
Infineon Technologies MOSFET N-CH 650V 6A TO220-3 TO-220-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 0 1 N-Channel - 650V 6A (Tc) 600 mOhm @ 1.7A, 10V 4V @ 80µA 9nC @ 10V 363pF @ 400V 10V ±20V 30W (Tc)
Default Photo
Per Unit
$1.150
RFQ
1,000
In-stock
Infineon Technologies MOSFET N-CHANNEL 600V 6A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 600V 6A (Tc) 600 mOhm @ 1.7A, 10V 4V @ 80µA 9nC @ 10V 363pF @ 400V 10V ±20V 21W (Tc)
Default Photo
Per Unit
$1.100
RFQ
249
In-stock
Infineon Technologies MOSFET N-CHANNEL 600V 6A TO220 TO-220-3 Full Pack CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel - 600V 6A (Tc) 600 mOhm @ 1.7A, 10V 4V @ 80µA 9nC @ 10V 363pF @ 400V 10V ±20V 21W (Tc)
Page 1 / 1