Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$1.300
VIEW
RFQ
Infineon Technologies MOSFET NCH 650V 10.1A TO220-3 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel Super Junction 650V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V 28W (Tc)
65CE650
Per Unit
$1.300
RFQ
7,250
In-stock
Infineon Technologies MOSFET N-CH 650V TO-220-3 TO-220-3 Full Pack CoolMOS™ CE Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active TO-220 Full Pack 0 1 N-Channel - 650V 7A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V 28W (Tc)
Default Photo
Per Unit
$1.810
RFQ
989
In-stock
Infineon Technologies MOSFET N-CH 650V 7.3A TO220 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-FP 0 1 N-Channel - 650V 7.3A (Tc) 600 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V 28W (Tc)
IPSA70R600CE
GET PRICE
RFQ
15,000
In-stock
Infineon Technologies MOSFET N-CH 700V 10.5A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 210µA 22nC @ 10V 474pF @ 100V 10V ±20V 86W (Tc)
Page 1 / 1