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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.440
RFQ
344
In-stock
Infineon Technologies MOSFET N-CH 120V 75A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 120V 75A (Tc) 11.4 mOhm @ 75A, 10V 4V @ 83µA 65nC @ 10V 4310pF @ 60V 10V ±20V 136W (Tc)
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Per Unit
$1.930
RFQ
2,309
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs PG-TO220-3-1 0 1 N-Channel - 100V 70A (Tc) 11.6 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V 125W (Tc)
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