- Package / Case :
- Packaging :
- Operating Temperature :
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- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 250V 3.8A PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 250V | 3.8A (Ta) | 100 mOhm @ 5.7A, 10V | 5V @ 150µA | 56nC @ 10V | 2150pF @ 50V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 10A 8VQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 150V | 10A (Ta), 56A (Tc) | 31 mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | 2300pF @ 50V | 10V | ±20V | 3.6W (Ta), 156W (Tc) | |||
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In-stock
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Infineon Technologies | MOSFET NCH 300V 19A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1 | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | 210W (Tc) |
