- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | STMicroelectronics | MOSFET N-CH 600V 21A | TO-220-3 | MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | 10V | ±25V | 170W (Tc) | ||||
|
|
|
1
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 7.2A TO-220 | TO-220-3 | SuperMESH3™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 950V | 7.2A (Tc) | 1.35 Ohm @ 3.6A, 10V | 5V @ 100µA | 34nC @ 10V | 1031pF @ 100V | 10V | ±30V | 150W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 900V 5.7A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO220-FP | 0 | 1 | N-Channel | - | 900V | 5.7A (Tc) | 1 Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | 10V | ±20V | 32W (Tc) | ||||
|
|
|
271
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 21A | TO-220-3 Full Pack | MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | 10V | ±25V | 30W (Tc) | ||||
|
|
|
513
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 21A | TO-247-3 | MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | 10V | ±25V | 170W (Tc) | ||||
|
|
|
1,846
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 5A TO-220 | TO-220-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 600V | 5A (Tc) | 1.6 Ohm @ 2.5A, 10V | 4.5V @ 50µA | 34nC @ 10V | 690pF @ 25V | 10V | ±30V | 90W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V |
