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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 19A TO-254AA TO-254-3, TO-254AA (Straight Leads) HEXFET® Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-254AA 0 1 N-Channel - 500V 19A (Tc) 270 mOhm @ 12A, 10V 4V @ 250µA 190nC @ 10V 4300pF @ 25V 10V ±20V 250W (Tc)
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Per Unit
$19.090
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V 60A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 0 1 N-Channel - 650V 60A (Tc) 45 mOhm @ 44A, 10V 3.5V @ 3mA 190nC @ 10V 6800pF @ 100V 10V ±20V 431W (Tc)
IRFP3710
5+
$2.200
50+
$1.500
RFQ
3,942
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-247AC TO-247-3 HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V 200W (Tc)
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Per Unit
$4.370
RFQ
5,982
In-stock
STMicroelectronics MOSFET N-CH 55V 120A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 120A (Tc) 6 mOhm @ 60A, 10V 4V @ 250µA 190nC @ 10V 4400pF @ 25V 10V ±20V 300W (Tc)
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