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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$7.110
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1500V 4A TO-220 TO-220-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220AB 0 1 N-Channel - 1500V 4A (Tc) 7 Ohm @ 2A, 10V 5V @ 250µA 50nC @ 10V 1300pF @ 25V 10V ±30V 160W (Tc)
IRF3315
5+
$1.500
50+
$0.900
RFQ
6,690
In-stock
Infineon Technologies MOSFET N-CH 150V 23A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 150V 23A (Tc) 70 mOhm @ 12A, 10V 4V @ 250µA 95nC @ 10V 1300pF @ 25V 10V ±20V 94W (Tc)
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