- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2 N-CH 1200V 50A MODULE | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | |||
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Infineon Technologies | MOSFET MODULE 1200V 50A | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V |
