- Manufacture :
- Package / Case :
- Series :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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921
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Not For New Designs | I2PAK | 0 | 1 | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 70W (Tc) | |||
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2,541
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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2,355
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A TO-220 | TO-220-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 70W (Tc) |
