- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Power Dissipation (Max) :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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14
In-stock
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STMicroelectronics | N-CHANNEL 900 V, 0.25 OHM TYP., | TO-220-3 | MDmesh™ K5 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 900V | 3A (Tc) | 2.1 Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | 173pF @ 100V | 10V | ±30V | 60W (Tc) | |||
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139
In-stock
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STMicroelectronics | N-CHANNEL 900 V, 0.25 OHM TYP., | TO-220-3 | MDmesh™ K5 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 900V | 4A (Tc) | 2.1 Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | 173pF @ 100V | 10V | ±30V | 20W (Tc) |
