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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 500V 19A TO-254AA TO-254-3, TO-254AA (Straight Leads) HEXFET® Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-254AA 0 1 N-Channel - 500V 19A (Tc) 270 mOhm @ 12A, 10V 4V @ 250µA 190nC @ 10V 4300pF @ 25V 10V ±20V 250W (Tc)
FDP20N50
Per Unit
$3.230
RFQ
13,782
In-stock
onsemi MOSFET N-CH 500V 20A TO-220 TO-220-3 UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 500V 20A (Tc) 230 mOhm @ 10A, 10V 5V @ 250µA 59.5nC @ 10V 3120pF @ 25V 10V ±30V 250W (Tc)
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