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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$7.420
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RFQ
STMicroelectronics MOSFET N-CH 800V 24A TO247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 800V 24A (Tc) 180 mOhm @ 12A, 10V 5V @ 100µA 43nC @ 10V 1530pF @ 100V 10V ±30V 250W (Tc)
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Per Unit
$8.030
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RFQ
STMicroelectronics MOSFET N-CH 900V 18.5A TO-247 SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 900V 18.5A (Tc) 299 mOhm @ 9A, 10V 5V @ 100µA 43nC @ 10V 1645pF @ 100V 10V ±30V 250W (Tc)
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Per Unit
$7.940
VIEW
RFQ
STMicroelectronics MOSFET N-CH 900V 18.5A TO-220 SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220-3 0 1 N-Channel - 900V 18.5A (Tc) 299 mOhm @ 9A, 10V 5V @ 100µA 43nC @ 10V 1645pF @ 100V 10V ±30V 250W (Tc)
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