- Manufacture :
- Series :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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1,672
In-stock
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Infineon Technologies | MOSFET N-CH 55V 44A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | 107W (Tc) | |||||
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230
In-stock
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Infineon Technologies | MOSFET N-CH 55V 44A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | 107W (Tc) | ||||
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780
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | 107W (Tc) | ||||
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302
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 107W (Tc) | ||||
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2,503
In-stock
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Infineon Technologies | MOSFET N-CH 250V 17A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 250V | 17A (Tc) | 100 mOhm @ 17A, 10V | 4V @ 54µA | 19nC @ 10V | 1500pF @ 25V | 10V | ±20V | 107W (Tc) | ||||
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5,696
In-stock
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Texas instruments | MOSFET N-CH 60V 100A TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 45A (Ta), 100A (Tc) | 9.5 mOhm @ 40A, 10V | 2.3V @ 250µA | 24nC @ 10V | 1880pF @ 30V | 4.5V, 10V | ±20V | 107W (Tc) |