- Series :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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463
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 60V | 80A (Tc) | 5 mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | 8400pF @ 30V | 4.5V, 10V | ±20V | 115W (Tc) | |||
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747
In-stock
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Infineon Technologies | MOSFET N-CH 60V 55A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 55A (Tc) | 16.5 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1812pF @ 25V | 10V | ±20V | 115W (Tc) | |||
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1,052
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 60V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 10V | ±20V | 115W (Tc) |
