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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.210
RFQ
693
In-stock
Infineon Technologies MOSFET N-CH 55V 22A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 55V 22A (Tc) 35 mOhm @ 12A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 37W (Tc)
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Per Unit
$1.640
RFQ
3,059
In-stock
Infineon Technologies MOSFET N-CH 55V 21A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 55V 21A (Tc) 40 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V 37W (Tc)
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Per Unit
$2.430
RFQ
3,302
In-stock
onsemi MOSFET N-CH 250V 33A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F 0 1 N-Channel - 250V 33A (Tc) 94 mOhm @ 16.5A, 10V 5V @ 250µA 48nC @ 10V 2135pF @ 25V 10V ±30V 37W (Tc)
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