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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.420
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V 18A TO247-3 TO-247-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V 72W (Tc)
IPP65R190C7FKSA1
Per Unit
$3.350
RFQ
1,400
In-stock
Infineon Technologies MOSFET N-CH 650V 13A TO220 TO-220-3 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 650V 13A (Tc) 190 mOhm @ 5.7A, 10V 4V @ 290µA 23nC @ 10V 1150pF @ 400V 10V ±20V 72W (Tc)
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Per Unit
$2.950
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V 18A TO220-3 TO-220-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 0 1 N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V 72W (Tc)
Default Photo
Per Unit
$4.350
RFQ
205
In-stock
Infineon Technologies MOSFET TO247-4 TO-247-4 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 0 1 N-Channel - 600V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V 72W (Tc)
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