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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
F1010N
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RFQ
9,520
In-stock
Infineon Technologies MOSFET N-CH 55V 85A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V 180W (Tc)
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Per Unit
$1.680
RFQ
1,652
In-stock
Infineon Technologies MOSFET N-CH 30V 116A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 116A (Tc) 7 mOhm @ 60A, 10V 1V @ 250µA 60nC @ 4.5V 3290pF @ 25V 4.5V, 10V ±16V 180W (Tc)
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