- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 14A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 150V | 14A (Tc) | 180 mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | 620pF @ 25V | 10V | ±30V | 86W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | 0 | 1 | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | 3.1W (Ta) | |||||
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898
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | 3.1W (Ta), 200W (Tc) | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CH 200V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 3W (Ta), 140W (Tc) | |||||
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1,806
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | 3.8W (Ta), 200W (Tc) |