- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 20A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | 2.8W (Ta), 37W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 7A (Ta) | 30 mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 5.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | N-Channel | - | 30V | 5.6A (Ta) | 35 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | ||||
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121
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 25V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 25V | 3.5A, 2.3A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | |||||||
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3,691
In-stock
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Infineon Technologies | MOSFET N/P-CH 25V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 25V | 3.5A, 2.3A | 100 mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V |
