- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | 3.6W (Ta), 52W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.8A 2X2 PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | P-Channel | - | 20V | 7.2A (Ta), 15A (Tc) | 31 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | 2.5V, 4.5V | ±12V | 2.1W (Ta), 9.6W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 10A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | 1.98W (Ta), 9.6W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 6.5A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | N-Channel | - | 20V | 6.5A (Ta) | 30 mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | 2.5V, 4.5V | ±12V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.6A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | P-Channel | - | 20V | 5.6A (Ta) | 50 mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16nC @ 5V | 1079pF @ 10V | 2.5V, 4.5V | ±12V | 2W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 3.7A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | P-Channel | - | 20V | 3.7A (Ta) | 65 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | 2.5V, 4.5V | ±12V | 1.3W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 8.2A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | P-Channel | - | 20V | 8.2A (Ta) | 20 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | 2520pF @ 10V | 2.5V, 4.5V | ±12V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 4.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | 0 | 1 | P-Channel | - | 20V | 4.4A (Ta) | 65 mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 1079pF @ 10V | 2.5V, 4.5V | ±12V | 2W (Ta) |
