Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 8.7A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 N-Channel - 30V 8.7A (Ta), 19A (Tc) 15.5 mOhm @ 8.5A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1019pF @ 25V 2.5V, 4.5V ±12V 2.1W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 8.8A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TSDSON-6 0 1 N-Channel - 30V 8.8A (Ta), 19A (Tc) 16 mOhm @ 8.5A, 10V 2.35V @ 25µA 8.7nC @ 10V 600pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 25V 9.9A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 N-Channel - 25V 9.9A (Ta), 21A (Tc) 13 mOhm @ 8.5A, 10V 2.35V @ 25µA 10.4nC @ 10V 653pF @ 10V 4.5V, 10V ±20V 2.1W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 6A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 P-Channel - 30V 6A (Ta), 13A (Tc) 37 mOhm @ 7.8A, 10V 2.4V @ 25µA 13nC @ 10V 580pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
Page 1 / 1