- Packaging :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 0.69 mOhm @ 100A, 10V (1)
- 0.75 mOhm @ 100A, 10V (2)
- 1.3 mOhm @ 100A, 10V (1)
- 1.4 Ohm @ 1A, 10V (1)
- 1.8 mOhm @ 100A, 10V (1)
- 120 mOhm @ 2.5A, 10V (1)
- 14.5 mOhm @ 36A, 10V (1)
- 18 mOhm @ 35A, 10V (1)
- 180 mOhm @ 1.5A, 10V (2)
- 185 mOhm @ 11A, 10V (1)
- 2 mOhm @ 75A, 10V (1)
- 2.3 mOhm @ 100A, 10V (1)
- 28.5 mOhm @ 21A, 10V (1)
- 3.7 mOhm @ 75A, 10V (1)
- 6 mOhm @ 75A, 10V (1)
- 65 mOhm @ 16A, 10V (1)
- 70 mOhm @ 10A, 10V (1)
- 90 mOhm @ 2.5A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 14.5 mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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487
In-stock
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Infineon Technologies | MOSFET NCH 300V 19A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1 | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | 210W (Tc) | ||||
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997
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | 5193pF @ 25V | 10V | ±20V | 163W (Tc) | ||||
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726
In-stock
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Texas instruments | MOSFET P-CH 15V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 1 | P-Channel | - | 15V | 2.3A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 2.7V, 10V | +2V, -15V | 791mW (Ta) | ||||
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290
In-stock
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Texas instruments | MOSFET P-CH 15V 1.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 1 | P-Channel | - | 15V | 1.6A (Ta) | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 2.7V, 10V | +2V, -15V | 791mW (Ta) | ||||
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2,989
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
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2,800
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 2 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
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3,492
In-stock
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Infineon Technologies | MOSFET N-CH 100V 127A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | 250W (Tc) | ||||
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1,580
In-stock
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Infineon Technologies | MOSFET N-CH 40V 240A AUTO | TO-263-7, D²Pak (6 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK-7 | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7437pF @ 25V | 10V | ±20V | 231W (Tc) | ||||
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1,600
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 10V | ±20V | 230W (Tc) | ||||
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1,359
In-stock
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Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | 160W (Tc) | ||||
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2,282
In-stock
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Infineon Technologies | MOSFET N CH 100V 35A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 1 | N-Channel | - | 100V | 35A (Tc) | 28.5 mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | 10V | ±20V | 91W (Tc) | ||||
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1,577
In-stock
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Infineon Technologies | MOSFET N-CH 55V 17A D2PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 1 | N-Channel | - | 55V | 17A (Tc) | 70 mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
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1,365
In-stock
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Infineon Technologies | MOSFET NCH 700V 5.4A TO251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO251 | 0 | 1 | N-Channel | Super Junction | 700V | 5.4A (Tc) | 1.4 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | 10V | ±20V | 53W (Tc) | ||||
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973
In-stock
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Infineon Technologies | MOSFET NCH 40V 240A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 0.75 mOhm @ 100A, 10V | 2.4V @ 250µA | 266nC @ 4.5V | 16488pF @ 25V | 4.5V, 10V | ±16V | 375W (Tc) | ||||
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810
In-stock
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Infineon Technologies | MOSFET NCH 40V 523A D2PAK | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 523A (Tc) | 0.69 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
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2,900
In-stock
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Infineon Technologies | MOSFET P-CH 55V 31A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 1 | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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995
In-stock
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Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 0.75 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | 10V | ±20V | 375W (Tc) | ||||
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100
In-stock
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Texas instruments | MOSFET 2P-CH 15V 1.17A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 1 | 2 P-Channel (Dual) | 840mW | Logic Level Gate | 15V | 1.17A | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | |||||||
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573
In-stock
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Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8MLP | 8-VDFN Exposed Pad | - | Cut Tape (CT) | Surface Mount | - | Active | 8-MLP (3x3) | 0 | 1 | N and P-Channel | 1.7W | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.9nC @ 10V | 190pF @ 25V |
