- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | 380W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 75V | 240A (Tc) | 2.6 mOhm @ 160A, 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 50V | 10V | ±20V | 370W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 1.6 mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | 6930pF @ 25V | 10V | ±20V | 330W (Tc) | ||||
|
|
|
1
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 160A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
|
|
|
99
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 3.9 mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | ||||
|
|
|
39
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 1.4 mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | 10990pF @ 40V | 4.5V, 10V | ±20V | 380W (Tc) | ||||
|
|
|
473
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 60V | 240A (Tc) | 2.1 mOhm @ 168A, 10V | 4V @ 250µA | 300nC @ 10V | 8850pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
|
|
126
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 240A (Tc) | 1.25 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | 9130pF @ 25V | 10V | ±20V | 380W (Tc) |
