- Package / Case :
- Supplier Device Package :
- Factory Stock :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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4,629
In-stock
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onsemi | MOSFET N-CH 100V 10A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 110880 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 40W (Tc) | |||
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VIEW | onsemi | MOSFET P-CH 500V 2.7A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | 85W (Tc) | |||
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28,183
In-stock
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onsemi | MOSFET N-CH 200V 28A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 166000 | 1 | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2200pF @ 25V | 10V | ±30V | 156W (Tc) | |||
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6,057
In-stock
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onsemi | MOSFET N-CH 60V 11A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 28W (Tc) |
