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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.0A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | - | 150V | 5A (Ta), 27A (Tc) | 58 mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | 1350pF @ 50V | 10V | ±20V | 3.6W (Ta), 104W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 10A 8VQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 150V | 10A (Ta), 56A (Tc) | 31 mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | 2300pF @ 50V | 10V | ±20V | 3.6W (Ta), 156W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 150V | 5.1A (Ta) | 43 mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | 1647pF @ 75V | 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | - | 150V | 5.2A (Ta) | 44 mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | 10V | ±20V | 3W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | 0 | 1 | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | 2W (Ta) | ||||
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1,476
In-stock
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Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | 2.8W (Ta) | |||||
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10,222
In-stock
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Infineon Technologies | MOSFET N-CH 150V 34A TO-220AB FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 150V | 34A (Tc) | 16 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4440pF @ 50V | 10V | ±30V | 46W (Tc) | ||||
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1,078
In-stock
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Infineon Technologies | MOSFET 2N-CH 150V 8.7A TO-220FP | TO-220-5 Full Pack | - | Tube | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-5 Full-Pak | 0 | 1 | 2 N-Channel (Dual) | 18W | Standard | 150V | 8.7A | 95 mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V |
