- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Factory Stock :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 1.5A, 10V (2)
- 115 mOhm @ 5.5A, 10V (1)
- 14 Ohm @ 200mA, 10V (1)
- 14.4 mOhm @ 24A, 10V (1)
- 17.8 mOhm @ 8A, 10V (1)
- 2 Ohm @ 500mA, 10V (1)
- 26 mOhm @ 4.2A, 10V (2)
- 330 mOhm @ 3A, 10V (2)
- 4.1 mOhm @ 50A, 10V (1)
- 4.4 mOhm @ 50A, 10V (1)
- 5 Ohm @ 200mA, 10V (2)
- 5 Ohm @ 500mA, 10V (3)
- 5.6 mOhm @ 50A, 10V (1)
- 6.7 mOhm @ 50A, 10V (1)
- 9.4 mOhm @ 12A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 160W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 40A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 11A (Ta), 40A (Tc) | 14.4 mOhm @ 24A, 10V | 4V @ 50µA | 35nC @ 10V | 1256pF @ 25V | 10V | ±20V | 3.6W (Ta), 46W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 16A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 16A (Ta), 89A (Tc) | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | 2490pF @ 25V | 10V | ±20V | 3.6W (Ta), 100W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 5.6 mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | 3090pF @ 25V | 10V | ±20V | 3.6W (Ta), 114W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | 4175pF @ 30V | 10V | ±20V | 3.6W (Ta), 156W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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664
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||||
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534
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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1,874
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | 850mW (Ta) | ||||
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2,453
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | 850mW (Ta) | ||||
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18,315
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 270MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 270mA (Ta) | 5 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | 35pF @ 18V | 10V | ±20V | 625mW (Ta) | ||||
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5,311
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 270MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 12000 | 1 | N-Channel | - | 60V | 270mA (Ta) | 5 Ohm @ 200mA, 10V | 3V @ 1mA | - | 60pF @ 10V | 10V | ±20V | 625mW (Ta) | ||||
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8,996
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 270MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 270mA (Ta) | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 5V, 10V | ±20V | 625mW (Ta) | ||||
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2,598
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 600MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 600mA (Ta) | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | 5V, 10V | ±20V | 700mW (Ta) | ||||
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2,839
In-stock
|
Diodes Incorporated | MOSFET N-CH 60V 600MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 600mA (Ta) | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | 5V, 10V | ±20V | 700mW (Ta) | ||||
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5,842
In-stock
|
Diodes Incorporated | MOSFET P-CH 60V 160MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | P-Channel | - | 60V | 160mA (Ta) | 14 Ohm @ 200mA, 10V | 3.5V @ 1mA | - | 50pF @ 18V | 10V | ±20V | 625mW (Ta) | ||||
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12,003
In-stock
|
onsemi | MOSFET N-CH 60V 400MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 10000 | 1 | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | ||||
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25,454
In-stock
|
onsemi | MOSFET N-CH 60V 500MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 450000 | 1 | N-Channel | - | 60V | 500mA (Ta) | 5 Ohm @ 200mA, 10V | 3V @ 1mA | - | 40pF @ 10V | 10V | ±20V | 830mW (Ta) | ||||
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6,057
In-stock
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onsemi | MOSFET N-CH 60V 11A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 28W (Tc) | ||||
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53,966
In-stock
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onsemi | MOSFET N-CH 60V 200MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | N-Channel | - | 60V | 200mA (Ta) | 5 Ohm @ 500mA, 10V | 3V @ 1mA | - | 50pF @ 25V | 4.5V, 10V | ±20V | 400mW (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V |
