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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | 8-VQFN Exposed Pad | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | 156W (Tc) | |||
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184
In-stock
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Texas instruments | MOSFET N-CH 40V 100A TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 4.5 mOhm @ 75A, 10V | 2.3V @ 250µA | 36nC @ 10V | 3150pF @ 20V | 4.5V, 10V | ±20V | 188W (Tc) | |||
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881
In-stock
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onsemi | MOSFET N-CH 500V 100A TO-264 | TO-264-3, TO-264AA | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | 0 | 1 | N-Channel | - | 500V | 100A (Tc) | 55 mOhm @ 50A, 10V | 5V @ 250µA | 238nC @ 10V | 12000pF @ 25V | 10V | ±30V | 2500W (Tc) |
