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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$9.860
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V TO-247-3 TO-247-3 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 650V 33A (Tc) 65 mOhm @ 17.1A, 10V 4V @ 850µA 64nC @ 10V 3020pF @ 400V 10V ±20V 171W (Tc)
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Per Unit
$2.430
RFQ
3,302
In-stock
onsemi MOSFET N-CH 250V 33A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F 0 1 N-Channel - 250V 33A (Tc) 94 mOhm @ 16.5A, 10V 5V @ 250µA 48nC @ 10V 2135pF @ 25V 10V ±30V 37W (Tc)
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