- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V TO247-4 | TO-247-4 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | 0 | 1 | N-Channel | - | 650V | 75A (Tc) | 19 mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | 9900pF @ 400V | 10V | ±20V | 446W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 650V 75A TO247-3 | TO-247-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 75A (Tc) | 19 mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | 9900pF @ 400V | 10V | ±20V | 446W (Tc) | |||
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763
In-stock
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STMicroelectronics | MOSFET N-CH 200V 75A TO-220 | TO-220-3 | STripFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 75A (Tc) | 34 mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | 3260pF @ 25V | 10V | ±20V | 190W (Tc) |
