- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | |||
|
|
|
596
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 30V | 11A (Ta) | 13.5 mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | 4030pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
|
|
|
12,003
In-stock
|
onsemi | MOSFET N-CH 60V 400MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 10000 | 1 | N-Channel | - | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | |||
|
|
|
6,057
In-stock
|
onsemi | MOSFET N-CH 60V 11A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 28W (Tc) |
