- Package / Case :
- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 30V | 9.8A (Ta) | 12.1 mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | 1270pF @ 25V | 10V, 20V | ±25V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 30V | 9.8A (Ta) | 17.5 mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | 1270pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 6A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | P-Channel | - | 30V | 6A (Ta), 13A (Tc) | 37 mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | 4.5V, 10V | ±20V | 2.1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 12A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 30V | 12A (Tc) | 11.9 mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | 1680pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 11A 3X3 PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | P-Channel | - | 30V | 11A (Ta), 24A (Tc) | 10 mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | 1543pF @ 25V | 10V, 20V | ±25V | 2.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 9.2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V |
