- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 2.3A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | P-Channel | - | 30V | 2.3A (Ta) | 200 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | 1.7W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 20.2A TO247 | TO-247-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | 1750pF @ 100V | 10V | ±20V | 151W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 20.2A TO220 | TO-220-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | 1750pF @ 100V | 10V | ±20V | 151W (Tc) | ||||
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230
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4.5A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 37W (Tc) | ||||
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GET PRICE |
47,000
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4.5A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 25W (Tc) | |||
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1,490
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4.5A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 37W (Tc) | ||||
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1,490
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4.5A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | 37W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 1.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | 2 P-Channel (Dual) | 1.25W | Logic Level Gate | 30V | 1.7A | 270 mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V |
