- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | ||||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 18A TO247-3 | TO-247-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 650V 18A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 26W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 18A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||||
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229
In-stock
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Infineon Technologies | MOSFET N-CH 500V 10A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | 0 | 1 | N-Channel | - | 500V | 10A (Tc) | 350 mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | 10V | ±20V | 32W (Tc) | |||||
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240
In-stock
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Texas instruments | MOSFET N-CH 40V TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 40V | 53A (Ta), 100A (Tc) | 7 mOhm @ 40A, 10V | 2.3V @ 250µA | 25nC @ 10V | 1800pF @ 20V | 4.5V, 10V | ±20V | 115W (Tc) | |||||
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1,296
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | ||||||
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205
In-stock
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Infineon Technologies | MOSFET TO247-4 | TO-247-4 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | 0 | 1 | N-Channel | - | 600V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||||
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GET PRICE |
7,210
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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7,200
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 3.6A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Standard | 30V | 3.6A | 100 mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | ||||||||
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1,650
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V |