- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | 3.1W (Ta), 8.3W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET TO247-4 | TO-247-4 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | 95W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 26A TO247-3 | TO-247-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | 95W (Tc) | ||||
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VIEW | Infineon Technologies | HIGH POWER_NEW | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 600V | 18A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V | 92W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 26A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | 95W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 500V 13A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 500V | 13A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | 10V | ±20V | 114W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 800V 17A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | Super Junction | 800V | 17A (Tc) | 280 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | 10V | ±20V | 101W (Tc) | ||||
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58
In-stock
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Infineon Technologies | MOSFET N-CH 800V COOLMOS TO220-3 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 800V | 17A (Tc) | 280 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | 10V | ±20V | 30W (Tc) | ||||
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495
In-stock
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Infineon Technologies | MOSFET N-CH 500V 13A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | 0 | 1 | N-Channel | Super Junction | 500V | 13A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | 10V | ±20V | 33W (Tc) | ||||
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184
In-stock
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Texas instruments | MOSFET N-CH 40V 100A TO220-3 | TO-220-3 | NexFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 4.5 mOhm @ 75A, 10V | 2.3V @ 250µA | 36nC @ 10V | 3150pF @ 20V | 4.5V, 10V | ±20V | 188W (Tc) | ||||
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230
In-stock
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Infineon Technologies | HIGH POWER_NEW | TO-247-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 18A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V | 92W (Tc) | ||||
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483
In-stock
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Infineon Technologies | HIGH POWER_NEW | TO-220-3 Full Pack | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 600V | 11A (Tc) | 125 mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | 1503pF @ 400V | 10V | ±20V | 32W (Tc) | ||||
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229
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 600V 26A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 600V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | 28W (Tc) | ||||
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1,115
In-stock
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Infineon Technologies | MOSFET N-CH 800V 17A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3F | 0 | 1 | N-Channel | Super Junction | 800V | 17A (Tc) | 280 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | 10V | ±20V | 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | ||||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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699
In-stock
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Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||||||||
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2,675
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V |
