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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 30V 11A 3X3 PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (3x3) 0 1 P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V 2.8W (Ta)
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Infineon Technologies MOSFET N-CH 55V 3.8A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) SOT-223 0 1 N-Channel - 55V 3.8A (Ta) 40 mOhm @ 3.8A, 10V 2V @ 250µA 48nC @ 10V 870pF @ 25V 4V, 10V ±16V 1W (Ta)
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Infineon Technologies MOSFET N-CH 55V 3.8A SOT223 TO-261-4, TO-261AA HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 1 N-Channel - 55V 3.8A (Ta) 40 mOhm @ 3.8A, 10V 2V @ 250µA 48nC @ 10V 870pF @ 25V 4V, 10V ±16V 1W (Ta)
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Per Unit
$8.230
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STMicroelectronics MOSFET N-CH 950V 17.5A TO-247 TO-247-3 Automotive, AEC-Q101, SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 950V 17.5A (Tc) 330 mOhm @ 9A, 10V 5V @ 100µA 48nC @ 10V 1550pF @ 100V 10V ±30V 250W (Tc)
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Per Unit
$2.430
RFQ
3,302
In-stock
onsemi MOSFET N-CH 250V 33A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F 0 1 N-Channel - 250V 33A (Tc) 94 mOhm @ 16.5A, 10V 5V @ 250µA 48nC @ 10V 2135pF @ 25V 10V ±30V 37W (Tc)
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