- Manufacture :
- Package / Case :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 40A PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 40A (Ta), 100A (Tc) | 1.4 mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | 4.5V, 10V | ±20V | 3.6W (Ta), 250W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 60A | TO-247-3 | Automotive, AEC-Q101, MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 650V | 60A (Tc) | 50 mOhm @ 30A, 10V | 5V @ 250µA | 120nC @ 10V | 5500pF @ 100V | 10V | ±25V | 446W (Tc) |
