Build a global manufacturer and supplier trusted trading platform.
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N CH 200V 3.7A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V 2.5W (Ta)
Default Photo
Per Unit
$3.760
VIEW
RFQ
Infineon Technologies MOSFET N-CH 600V TO220-3 TO-220-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 600V 23.8A (Tc) 160 mOhm @ 9A, 10V 4.5V @ 750µA 44nC @ 10V 2080pF @ 100V 10V ±20V 176W (Tc)
Default Photo
Per Unit
$5.180
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1700V 2.6A TO247-3 TO-247-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V 160mW
Default Photo
Per Unit
$5.010
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1700V 2.6A ISOWATT218FX PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active ISOWATT-218FX 0 1 N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V 63W (Tc)
Default Photo
Per Unit
$3.760
VIEW
RFQ
Infineon Technologies MOSFET N-CH 600V TO220FP-3 TO-220-3 Full Pack CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-FP 0 1 N-Channel - 600V 23.8A (Tc) 160 mOhm @ 9A, 10V 4.5V @ 750µA 44nC @ 10V 2080pF @ 100V 10V ±20V 34W (Tc)
Default Photo
Per Unit
$4.180
RFQ
295
In-stock
Infineon Technologies MOSFET N-CH 600V TO247-3 TO-247-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 23.8A (Tc) 160 mOhm @ 9A, 10V 4.5V @ 750µA 44nC @ 10V 2080pF @ 100V 10V ±20V 176W (Tc)
Page 1 / 1