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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 800V 3A TO220FP | TO-220-3 Full Pack | MDmesh™ K5 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 800V | 3A (Tc) | 2.6 Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | 10V | ±30V | 20W (Tc) | ||||
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STMicroelectronics | MOSFET N-CHANNEL 800V 3A TO220 | TO-220-3 | MDmesh™ K5 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 800V | 3A (Tc) | 2.6 Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | 10V | ±30V | 60W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN Dual (2x2) | 0 | 1 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V |
