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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 16A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 0 | 1 | N-Channel | - | 60V | 16A (Ta), 89A (Tc) | 6.7 mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | 2490pF @ 25V | 10V | ±20V | 3.6W (Ta), 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 0 | 1 | P-Channel | - | 30V | 8A (Tc) | 20 mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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5,085
In-stock
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onsemi | MOSFET N-CH 300V TO-3 | TO-3P-3, SC-65-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-3PN | 54900 | 0 | 1 | N-Channel | - | 300V | 38A (Tc) | 85 mOhm @ 19A, 10V | 5V @ 250µA | 60nC @ 10V | 2600pF @ 25V | 10V | ±30V | 312W (Tc) |
