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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 5.6A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1 N-Channel   - 30V 5.6A (Ta) 35 mOhm @ 3.7A, 10V 1V @ 250µA 27nC @ 10V 520pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.900
RFQ
4,629
In-stock
onsemi MOSFET N-CH 100V 10A IPAK TO-251-3 Short Leads, IPak, TO-251AA QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active I-PAK 110880 1 N-Channel   - 100V 10A (Tc) 180 mOhm @ 5A, 10V 2V @ 250µA 12nC @ 5V 520pF @ 25V 5V, 10V ±20V 2.5W (Ta), 40W (Tc)
IRF7379QTRPBF
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RFQ
7,210
In-stock
Infineon Technologies MOSFET N/P-CH 30V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N and P-Channel 2.5W Logic Level Gate 30V 5.8A, 4.3A 45 mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V      
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Infineon Technologies MOSFET 2N-CH 30V 4.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 2 N-Channel (Dual) 2W Standard 30V 4.9A 50 mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V      
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Per Unit
$1.030
RFQ
1,650
In-stock
Infineon Technologies MOSFET 2N-CH 30V 4.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 2 N-Channel (Dual) 2W Standard 30V 4.9A 50 mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V      
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