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- Current - Continuous Drain (Id) @ 25°C :
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- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | onsemi | MOSFET P-CH 500V 2.7A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | 85W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 80V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V |
