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Package / Case :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$4.620
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RFQ
Infineon Technologies HIGH POWER_NEW TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3 0 1 N-Channel - 600V 18A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V 92W (Tc)
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Per Unit
$5.460
RFQ
230
In-stock
Infineon Technologies HIGH POWER_NEW TO-247-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 18A (Tc) 125 mOhm @ 7.8A, 10V 4.5V @ 390µA 36nC @ 10V 1503pF @ 400V 10V ±20V 92W (Tc)
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Per Unit
$1.590
RFQ
1,864
In-stock
Infineon Technologies MOSFET N-CH 500V 13A PG-TO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-3-1 0 1 N-Channel Super Junction 500V 13A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V 92W (Tc)
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