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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.020
RFQ
3,790
In-stock
Infineon Technologies MOSFET N-CH 55V 49A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 55V 49A (Tc) 12 mOhm @ 26A, 10V 4V @ 250µA 130nC @ 10V 2900pF @ 25V 10V ±20V 58W (Tc)
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Per Unit
$3.120
RFQ
10,222
In-stock
Infineon Technologies MOSFET N-CH 150V 34A TO-220AB FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 150V 34A (Tc) 16 mOhm @ 20A, 10V 5V @ 250µA 110nC @ 10V 4440pF @ 50V 10V ±30V 46W (Tc)
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