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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Input Type | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | Reverse Recovery Time (trr) | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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4,601
In-stock
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Infineon Technologies | IGBT 600V 40A 166W TO220-3 | TO-220-3 | TrenchStop® | Tube | Standard | Through Hole | -40°C ~ 175°C (TJ) | Active | PG-TO220-3 | 0 | 1 | 166W | 41ns | Trench Field Stop | 600V | 40A | 2.05V @ 15V, 20A | 60A | 770µJ | 120nC | 18ns/199ns | 400V, 20A, 12 Ohm, 15V | ||||||||||||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | D-PAK | 0 | 1 | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||||||||||||||
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4
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Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 150V | 83A (Tc) | 15 mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | 10V | ±30V | 330W (Tc) | |||||||||||||||
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4
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Infineon Technologies | MOSFET N-CH 150V 83A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 150V | 83A (Tc) | 15 mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | 10V | ±30V | 330W (Tc) | |||||||||||||||
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54
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Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | 330W (Tc) | |||||||||||||||
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27
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Infineon Technologies | MOSFET N-CH 55V 174A SUPER-220 | Super-220™-3 (Straight Leads) | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | SUPER-220™ (TO-273AA) | 0 | 1 | N-Channel | - | 55V | 174A (Tc) | 5 mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | 10V | ±20V | 330W (Tc) | |||||||||||||||
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365
In-stock
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Infineon Technologies | MOSFET N-CH 200V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 62A (Tc) | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | 330W (Tc) | ||||||||||||||||
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432
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Infineon Technologies | MOSFET N-CH 49V 80A TO220-7 | TO-220-7 | TEMPFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | PG-TO-220-7-12 | 0 | 1 | N-Channel | Temperature Sensing Diode | 49V | 80A (Tc) | 6.5 mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | 4800pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||||||||||||||
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3,073
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Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | P-Channel | - | 55V | 14A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 33W (Tc) |
