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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | 8-PowerTDFN | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | 78W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | 8-VQFN Exposed Pad | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | 156W (Tc) | ||||
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Infineon Technologies | MOSFET N-CH 75V 85A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 1 | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | 140W (Tc) |