- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.0A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | - | 150V | 5A (Ta), 27A (Tc) | 58 mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | 1350pF @ 50V | 10V | ±20V | 3.6W (Ta), 104W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 10A 8VQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 150V | 10A (Ta), 56A (Tc) | 31 mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | 2300pF @ 50V | 10V | ±20V | 3.6W (Ta), 156W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | - | 150V | 5.2A (Ta) | 44 mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | 10V | ±20V | 3W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 0.9A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | 0 | 1 | N-Channel | - | 150V | 900mA (Ta) | 1.2 Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | 88pF @ 25V | 10V | ±30V | 2W (Ta) | |||
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4
In-stock
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Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 150V | 83A (Tc) | 15 mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | 10V | ±30V | 330W (Tc) |
